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| NTE2393 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2393 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 500V for Off-Line SMPS D High Current: 9A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls Absolute Maximum Ratings: Drain-Source Voltage (VGS = 0), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Clamped Drain Inductive Current (Note 1), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse width limited by safe operating area. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS ID = 250A, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 400V, TC = +125C Gate-Body Leakage Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain-Source On Resistance VGS(th) RDS(on) VDS = VGS, ID = 250A VGS = 10V, ID = 4.5A VGS = 10V, ID = 4.5A, TC = 100C Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics Turn-On Time Rise Time Turn-Off Delay Time Fall Time Source Drain Diode Characteristics Source-Drain Current Source-Drain Current (Pulsed) Forward ON Voltage Reverse Recovery Time ISD ISDM VSD trr Note 2 ISD = 9A, VGS = 0 IDS = 9A, VGS = 0, di/dt = 100A/s - - - - - - - 420 9 36 1.15 - A A V ns td(on) tr td(off) tf VDD = 250V, ID = 4.5A, RI = 4.7, VI = 10V - - - - 30 40 130 30 40 60 170 40 ns ns ns ns gfs Ciss Coss Crss VDS = 25V, ID = 4.5A VDS = 25V, VGS = 0, f = 1MHz 5 - - - - - mho pf pf pf 2 - - - - - 4 0.7 1.4 V IGSS VDS = 0, VGS = 20V 500 - - - - - - - - 250 1000 100 V A A nA Symbol Test Conditions Min Typ Max Unit 1600 1900 - - 280 170 Note 2. Pulse width limited by safe operating area. Note 3. Pulsed: Pulse Duration = 300s, Duty Cycle 1.5% .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
Price & Availability of NTE2393
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